Shubnikov-de Haas oscillations in 2D electron gas with anisotropic mobility

Shubnikov-de Haas oscillations in selectively doped GaAs single quantum wells with AlAs/GaAs superlattice barriers has been studied at temperature T=4.2 K magnetic fields B<1 T. High-mobility heterostructures thin spacer had grown by molecular-beam epitaxy on (001) substrates. The mobilities of two-dimensional electron gas measured two crystallographic directions [110] and differ from each other more than 50%. Properly adapted expression for amplitudes anisotropic samples used correct analysis this oscillations. It was stated that life-time our as Hall bars oriented the varies less 5%. Obtained results show system mobility is isotropic aforementioned accuracy. Keywords: oscillations, mobility, life-time, barriers.